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		No cover image available Studies of electrical breakdown in thin films of silicon dioxide by Holland, Stephen Edward \| . Series: Edition: Language: English Publication details: Berkeley ; University of California, ; 1986Availability: Items available for loan: 1 Call number: 621.382 Hol. Place hold Add to cart (remove)
		No cover image available Structure and properties of silicon dioxide films thermally nitrided in pure ammonia by Ruggles, Gray Alan \| . Series: Edition: Language: English Publication details: Pennsylvania ; Pennsylvania State University, ; 1986Availability: Items available for loan: 1 Call number: 621.382 Rug. Place hold Add to cart (remove)
		SiO2 in Si microdevices by Itsumi, Manabu \| . Series: Edition: Language: English Publication details: Berlin ; Springer ; 2002Availability: Items available for loan: 1 Call number: 621.382:669.782Its. Place hold Add to cart (remove)
		No cover image available Preparation and characterization of plasma enhanced chemical vapor deposited silicon dioxide and poly-oxide films (R) by Dixit, B.B \| Srivastava, C.M. and Khokle, W.S. Series: Edition: Language: English Publication details: Bombay ; IIT ; 1991Availability: Items available for reference: Not for loan (1) Call number: 043:621.382Dix. Add to cart (remove)
		No cover image available Growth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R) by Choksi, Asheesh J [Author] \| Chandorkar, Arun N [ Supervisor] \| Indian Institute of Technology Bombay. Department of Electrical Engineering. Language: English Publication details: Bombay IIT 1991Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1991 Availability: Items available for reference: Not for loan (1) Call number: 043:621.382:537.56 Cho. Add to cart (remove)
		No cover image available Thin film reference materials development final redport for CRADA CN-1364 by . Series: NIST SP 400 - 100 : 1998Edition: Language: English Publication details: Gaithersburg ; National Institute of Standard and Technology ; 1998Online access: Click here to access online Availability: Items available for reference: Not for loan (1) Call number: LNIST SP 400 - 100 : 1998. Add to cart (remove)
		No cover image available Study of thin N2O gate oxides for MOS devices (R) by Subrahmanyam, P.V.S [Author] \| Vasi, J.M [Supervisor] \| Indian Institute of Technology Bombay. Department of Electrical Engineering. Language: English Publication details: Mumbai IIT 1999Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999 Availability: Items available for reference: Not for loan (1) Call number: 043:621.382 Sub. Add to cart (remove)

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