Study of thin N2O gate oxides for MOS devices (R)
Language: English Publication details: Mumbai IIT 1999Description: vii,106 p. 28 cmSubject(s): Theses and Dissertations | Metal oxide semiconductors devices | Silicon Dioxide | Dielectric filmsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Theses and Dissertations | Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382 Sub | Not for loan | D08A25 | 187234 |
Total holds: 0
Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 1999
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