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Study of thin N2O gate oxides for MOS devices (R)

By: Subrahmanyam, P.V.S [Author]Contributor(s): Vasi, J.M [Supervisor] | Indian Institute of Technology Bombay. Department of Electrical Engineering Language: English Publication details: Mumbai IIT 1999Description: vii,106 p. 28 cmSubject(s): Theses and Dissertations | Metal oxide semiconductors devices | Silicon Dioxide | Dielectric filmsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999

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Holdings
Item type	Current library	Call number	Status	Notes	Date due	Barcode	Item holds
Theses and Dissertations	Central Library, IITB Pamphlet Section (Theses, Standards, Reports)	043:621.382 Sub	Not for loan	D08A25		187234

Total holds: 0

Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 1999

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