APA

Choksi A. J., Chandorkar A. N. & Indian Institute of Technology Bombay. (1991). Growth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R). Bombay: IIT.

Chicago

Choksi Asheesh J, Chandorkar Arun N and Indian Institute of Technology Bombay. 1991. Growth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R). Bombay: IIT.

Harvard

Choksi A. J., Chandorkar A. N. and Indian Institute of Technology Bombay. (1991). Growth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R). Bombay: IIT.

MLA

Choksi Asheesh J, Chandorkar Arun N and Indian Institute of Technology Bombay. Growth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R). Bombay: IIT. 1991.