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Growth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R)

By: Choksi, Asheesh J [Author]Contributor(s): Chandorkar, Arun N [ Supervisor] | Indian Institute of Technology Bombay. Department of Electrical Engineering Language: English Publication details: Bombay IIT 1991Description: 200 p. 28 cmISBN: 0Subject(s): Theses and Dissertations | Silicon Dioxide | Metal oxide semiconductorsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1991

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Holdings
Item type	Current library	Call number	Status	Notes	Date due	Barcode	Item holds
Theses and Dissertations	Central Library, IITB Pamphlet Section (Theses, Standards, Reports)	043:621.382:537.56 Cho	Not for loan	D08A23		164875

Total holds: 0

Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 1991

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