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Growth kinetics and electrical properties of silicon dioxide films grown in an inductively coupled RF plasma anodization reactor (R) by
Language: English
Publication details: Bombay IIT 1991
Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1991
Availability: Items available for reference: Central Library, IITB: Not for loan (1)Call number: 043:621.382:537.56 Cho.

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Study of thin N2O gate oxides for MOS devices (R) by
Language: English
Publication details: Mumbai IIT 1999
Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999
Availability: Items available for reference: Central Library, IITB: Not for loan (1)Call number: 043:621.382 Sub.

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