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		No cover image available Numerical simulation of MOS devices under radiation (R) by Vasudevan, Vinita [Author] \| Vasi, J [ Supervisor] \| Indian Institute of Technology Bombay. Department of Electrical Engineering. Language: English Publication details: Bombay IIT 1992Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1992 Availability: Items available for reference: Not for loan (1) Call number: 043:621.382:539.16:518.6 Vas. Add to cart (remove)
		No cover image available Traps and trap generation in ultrathin jet vapor deposited, JVD, silicon nitride gate dielectrics (R) by ManjulaRani, K.N [Author] \| Vasi, J.M [Supervisor] \| Ramgopal Rao, V [Supervisor] \| Indian Institute of Technology Bombay Department of Electrical Engineering. Language: English Publication details: Bombay IIT 2004Dissertation note: Thesis Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2004 Availability: Items available for reference: Not for loan (1) Call number: 043:621.382.3:621.315.61 Man. Add to cart (remove)
		No cover image available Study of thin N2O gate oxides for MOS devices (R) by Subrahmanyam, P.V.S [Author] \| Vasi, J.M [Supervisor] \| Indian Institute of Technology Bombay. Department of Electrical Engineering. Language: English Publication details: Mumbai IIT 1999Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999 Availability: Items available for reference: Not for loan (1) Call number: 043:621.382 Sub. Add to cart (remove)

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