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			Numerical simulation of MOS devices under radiation (R) by Vasudevan, Vinita [Author] Vasi, J [ Supervisor] Indian Institute of Technology Bombay. Department of Electrical Engineering Language: English Publication details: Bombay IIT 1992 Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1992 Availability: Items available for reference: Central Library, IITB: Not for loan (1)Call number: 043:621.382:539.16:518.6 Vas. Save to lists Add to cart (remove)
			Traps and trap generation in ultrathin jet vapor deposited, JVD, silicon nitride gate dielectrics (R) by ManjulaRani, K.N [Author] Vasi, J.M [Supervisor] Ramgopal Rao, V [Supervisor] Indian Institute of Technology Bombay Department of Electrical Engineering Language: English Publication details: Bombay IIT 2004 Dissertation note: Thesis Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2004 Availability: Items available for reference: Central Library, IITB: Not for loan (1)Call number: 043:621.382.3:621.315.61 Man. Save to lists Add to cart (remove)
			Study of thin N2O gate oxides for MOS devices (R) by Subrahmanyam, P.V.S [Author] Vasi, J.M [Supervisor] Indian Institute of Technology Bombay. Department of Electrical Engineering Language: English Publication details: Mumbai IIT 1999 Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999 Availability: Items available for reference: Central Library, IITB: Not for loan (1)Call number: 043:621.382 Sub. Save to lists Add to cart (remove)