Traps and trap generation in ultrathin jet vapor deposited, JVD, silicon nitride gate dielectrics (R)
Language: English Publication details: Bombay IIT 2004Description: xxii,146 p; 30 cmSubject(s): Vasi, J.M. and Ramgopal Rao, V | Theses and Dissertations | Silicon nitride | Vapor deposition | Dielectric devices | Metal oxide semiconductors field-effect transistorsDissertation note: Thesis Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2004| Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
|
Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382.3:621.315.61 Man | Not for loan | D08A26 | 202529 |
Total holds: 0
Thesis Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2004
There are no comments on this title.