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Growth and characterization of ultra thin gate dielectrics in N2O ambient (R)

by Borse, Dileep G [Author] | Chandorkar, A. N [Supervisor] | Indian Institute of Technology Bombay. Department of Electrical Engineering.

Language: English Publication details: Mumbai IIT 2002Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2002 Availability: Items available for reference: Not for loan (1) Call number: 043:621.382 Bor.

Study of thin N2O gate oxides for MOS devices (R)

by Subrahmanyam, P.V.S [Author] | Vasi, J.M [Supervisor] | Indian Institute of Technology Bombay. Department of Electrical Engineering.

Language: English Publication details: Mumbai IIT 1999Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999 Availability: Items available for reference: Not for loan (1) Call number: 043:621.382 Sub.

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