Growth and characterization of ultra thin gate dielectrics in N2O ambient (R)

By: Borse, Dileep G [Author]Contributor(s): Chandorkar, A. N [Supervisor] | Indian Institute of Technology Bombay. Department of Electrical EngineeringLanguage: English Publication details: Mumbai IIT 2002Description: xv,163 p. 30 cmSubject(s): Theses and Dissertations | Metal oxide semiconductors | Hot carriers | Dielectric filmsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2002
Star ratings
    Average rating: 0.0 (0 votes)
Holdings
Item type Current library Call number Status Notes Date due Barcode Item holds
Theses and Dissertations Theses and Dissertations Central Library, IITB
Pamphlet Section (Theses, Standards, Reports)
043:621.382 Bor Not for loan D08A25 198226
Total holds: 0

Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 2002

There are no comments on this title.

to post a comment.
Share

Powered by Koha