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Growth and characterization of ultra thin gate dielectrics in N2O ambient (R) by
Language: English
Publication details: Mumbai IIT 2002
Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2002
Availability: Items available for reference: Central Library, IITB: Not for loan (1)Call number: 043:621.382 Bor.

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Study of thin N2O gate oxides for MOS devices (R) by
Language: English
Publication details: Mumbai IIT 1999
Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1999
Availability: Items available for reference: Central Library, IITB: Not for loan (1)Call number: 043:621.382 Sub.

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