Characterization and modelling of NBTI in silicon oxynitride (SiON) and high-k metal gate p-MOSFETs with impact on circuit performance (R)
Language: English Publication details: Mumbai IIT 2015Description: xxv,208 p. 30 cmSubject(s): Theses and Dissertations | Silicon nitride | Metal oxide semiconductor field-effect transistors | Metal oxide semiconductors-Effect of temperature on | Gate array circuits -- MaterialsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2015| Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
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Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382 Goe | Not for loan | D08B02 | 239092 |
Total holds: 0
Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 2015
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