Characterization and modelling of NBTI in silicon oxynitride (SiON) and high-k metal gate p-MOSFETs with impact on circuit performance (R)

Goel, Nilesh

Characterization and modelling of NBTI in silicon oxynitride (SiON) and high-k metal gate p-MOSFETs with impact on circuit performance (R) - Mumbai IIT 2015 - xxv,208 p. 30 cm

Thesis



Theses and Dissertations
Silicon nitride
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductors-Effect of temperature on
Gate array circuits--Materials

043:621.382 / Goe

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