Thermal oxidation of silicon in dry oxygen growth kinetics and charge characterization in the thin regime
Language: English Series: Publication details: n.p. ; Stanford Univ., ; 1983Edition: Description: xx,258 p; 21.5 cmISBN: 3Subject(s): | Silicon oxide films | Metal insulator semiconductors-Congresses | Thin films-Electric properties| Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
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Books
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Central Library, IITB | 621.372:621.382 Mas | Available | G36A02 | 138759 |
Total holds: 0
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