Point defect generation during oxidation of silicon in dry oxygen
Language: English Series: Publication details: Stanford ; Stanford University, ; 1985Edition: Description: 128 p; 21.5 cmISBN:- 0
| Item type | Current library | Call number | Status | Notes | Barcode | |
|---|---|---|---|---|---|---|
Books
|
Central Library, IITB Compact Storage - Basement Area | 621.382 Dun | Available | C14A16 | 143985 |
Total holds: 0
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