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Characterization and modeling of negative bias temperature instability in silicon oxynitride(SiON) and high-K/MG P-MOSFETs (R)

By: Deora, Shweta [Author]Contributor(s): Kottantharayil, Anil [Supervisor] | Indian Institute of Technology Bomba Department of Electrical Engineering Language: English Publication details: Mumbai IIT 2012Description: xxiv, 181 p. 30 cmSubject(s): Silicon nitride | Metal oxide semiconductors field-effect transistors | Semiconductors -- Effect of temperature onDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2012

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Holdings
Item type	Current library	Call number	Status	Notes	Date due	Barcode	Item holds
Theses and Dissertations	Central Library, IITB Pamphlet Section (Theses, Standards, Reports)	043:621.382 Deo	Not for loan	D08A29		229835

Total holds: 0

Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2012

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