Metal work-function induced threshold voltage variability in multi-gate transistors (R)

By: Penugonda, Harsha Vardhan [Author]Contributor(s): Ganguly, Udayan [Supervisor] | Ganguly, Swaroop [Supervisor] | Indian Institute of Technology Bombay. Department of Electrical EngineeringMaterial type: TextTextLanguage: English Publication details: Mumbai IIT 2019Description: xx,92 p. 30 cmSubject(s): Theses and Dissertations | Electronics | Semiconductors | Transistors | Voltage variability | Metal gate granularityDissertation note: Thesis Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2019
Star ratings
    Average rating: 0.0 (0 votes)
Holdings
Item type Current library Call number Status Date due Barcode Item holds
Theses and Dissertations Theses and Dissertations Central Library, IITB
Pamphlet Section (Theses, Standards, Reports) 		621.382.3 Pen Not for loan 247164
Total holds: 0

Thesis Ph.D Indian Institute of Technology Bombay. Department of Electrical Engineering 2019

There are no comments on this title.

to post a comment.
Share

Powered by Koha