Characterization and modeling of negative bias temperature instability in silicon oxynitride(SiON) and high-K/MG P-MOSFETs (R)
Language: English Publication details: Mumbai IIT 2012Description: xxiv, 181 p. 30 cmSubject(s): Silicon nitride | Metal oxide semiconductors field-effect transistors | Semiconductors -- Effect of temperature onDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2012Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Theses and Dissertations | Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382 Deo | Not for loan | D08A29 | 229835 |
Total holds: 0
Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2012
There are no comments on this title.