Study of Si-Doped GaN and InxGa1-xN epitaxial films grown by reactive co-sputtering (R)
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TextLanguage: English Publication details: Mumbai IIT 2020Description: xxiii,220 p. 30 cmSubject(s): Theses and Dissertations | Thin films | Sputtering(Physics)Dissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Physics 2020
| Item type | Current library | Collection | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
|
Central Library, IITB On Display (Circulation Area - Ground Floor) | Reference | 539.23 Moh | Not for loan | 247999 |
Total holds: 0
Thesis Ph.D. Indian Institute of Technology Bombay. Department of Physics 2020
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