Detailed investigation of single-, Bi- and multi layer quantum dot heterostructures grown by molecular beam epitaxy for enchancing performance characteristics of future InAs/GaAs quantum dot infrared photodetectors (R)
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TextLanguage: English Publication details: Mumabi IIT 2018Description: xxviii,197 p. 30 cmSubject(s): Theses and Dissertations | Semiconductors -- Materials | Quantum dots | Molecular beam epitaxy | Heterostructures | Ion implantationDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Centre for Research in Nanotechnology and Science 2018
| Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
|
Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382 Ton | Not for loan | D03A05 | 242629 |
Total holds: 0
Thesis Ph.D. Indian Institute of Technology Bombay. Centre for Research in Nanotechnology and Science 2018
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