Detailed investigation of single-, Bi- and multi layer quantum dot heterostructures grown by molecular beam epitaxy for enchancing performance characteristics of future InAs/GaAs quantum dot infrared photodetectors (R)
Tongbram, Binita
Detailed investigation of single-, Bi- and multi layer quantum dot heterostructures grown by molecular beam epitaxy for enchancing performance characteristics of future InAs/GaAs quantum dot infrared photodetectors (R) - Mumabi IIT 2018 - xxviii,197 p. 30 cm
Thesis
Theses and Dissertations
Semiconductors--Materials
Quantum dots
Molecular beam epitaxy
Heterostructures
Ion implantation
043:621.382 / Ton
Detailed investigation of single-, Bi- and multi layer quantum dot heterostructures grown by molecular beam epitaxy for enchancing performance characteristics of future InAs/GaAs quantum dot infrared photodetectors (R) - Mumabi IIT 2018 - xxviii,197 p. 30 cm
Thesis
Theses and Dissertations
Semiconductors--Materials
Quantum dots
Molecular beam epitaxy
Heterostructures
Ion implantation
043:621.382 / Ton