Detailed investigation of single-, Bi- and multi layer quantum dot heterostructures grown by molecular beam epitaxy for enchancing performance characteristics of future InAs/GaAs quantum dot infrared photodetectors (R)

Tongbram, Binita

Detailed investigation of single-, Bi- and multi layer quantum dot heterostructures grown by molecular beam epitaxy for enchancing performance characteristics of future InAs/GaAs quantum dot infrared photodetectors (R) - Mumabi IIT 2018 - xxviii,197 p. 30 cm

Thesis


Theses and Dissertations
Semiconductors--Materials
Quantum dots
Molecular beam epitaxy
Heterostructures
Ion implantation

043:621.382 / Ton

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