Effect of device dimensions, layout and technological parameters on the performance and reliability of Nano-scale HKMG transistors (R)
Language: English Publication details: Mumbai IIT 2017Description: xviii,107 p. 30 cmSubject(s): Theses and Dissertations | Metal oxide semiconductor field-effect transistors | Nanotechnology | Gate array circuits -- Materials | Nanostructure materialsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2017Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
---|---|---|---|---|---|---|---|
Theses and Dissertations | Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382.3:620.168.3 Duh | Not for loan | D08A19 | 241553 |
Total holds: 0
Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 2017
There are no comments on this title.