CMOS device design and circuit performance of silicon gate all around nanowire MOSFETs in scaled technologies (R)
Language: English Publication details: Mumbai 2014 IITDescription: xxxvi,159 p. 30 cmSubject(s): Theses and Dissertations | Metal oxide semiconductor field-effect transistors | Metal oxide semiconductors | ComplimentaryDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 2014| Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|
Theses and Dissertations
|
Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382.3 Nay | Not for loan | D08B01 | 237938 |
Total holds: 0
Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 2014
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