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Study of thin N2O gate oxides for MOS devices (R)

Subrahmanyam, P.V.S.

Study of thin N2O gate oxides for MOS devices (R) - Mumbai IIT 1999 - vii,106 p. 28 cm

Thesis

Subjects--Topical Terms:
Theses and Dissertations
Metal oxide semiconductors devices
Silicon Dioxide
Dielectric films

Universal Decimal Class. No.: 043:621.382 / Sub

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