Computer aided simulation of MOS device degradation (R)
Language: English Publication details: Mumbai IIT 1998Description: xiii,175 p. 28 cmSubject(s): Theses and Dissertations | Metal oxide semiconductors -- Computer simulationDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Electrical Engineering 1998Item type | Current library | Call number | Status | Notes | Date due | Barcode | Item holds |
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Central Library, IITB Pamphlet Section (Theses, Standards, Reports) | 043:621.382:620.1:681.3 Sub | Not for loan | D08A25 | 186863 |
Total holds: 0
Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Electrical Engineering 1998
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