Normal view MARC view ISBD view

Optoelectronic properties of spontaneously formed individual luminescent domains in InGaN/GaN quantum well based light emitting diodes (R)

By: De, Suman [Author]Contributor(s): Chowdhury, Arindam [Supervisor] | Indian Institute of Technology Bombay. Department of Chemistry Language: English Publication details: Bombay IIT 2012Description: xvii,128 p. 30 cmSubject(s): Theses and Dissertations | Gallium compounds | Optoelectronics -- Materials | Light emitting diodes | Quantum wellsDissertation note: Thesis Ph.D. Indian Institute of Technology Bombay. Department of Chemistry 2012

Average rating: 0.0 (0 votes)

Holdings
Item type	Current library	Call number	Status	Notes	Date due	Barcode	Item holds
Theses and Dissertations	Central Library, IITB Pamphlet Section (Theses, Standards, Reports)	043:546.68:621.383 De	Not for loan	D07B18		232729

Total holds: 0

Thesis
Ph.D.
Indian Institute of Technology Bombay. Department of Chemistry 2012

There are no comments on this title.

to post a comment.