Normal view MARC view ISBD view

Optoelectronic properties of spontaneously formed individual luminescent domains in InGaN/GaN quantum well based light emitting diodes (R)

De, Suman

Optoelectronic properties of spontaneously formed individual luminescent domains in InGaN/GaN quantum well based light emitting diodes (R) - Bombay IIT 2012 - xvii,128 p. 30 cm

Thesis

Subjects--Topical Terms:
Theses and Dissertations
Gallium compounds
Optoelectronics--Materials
Light emitting diodes
Quantum wells

Universal Decimal Class. No.: 043:546.68:621.383 / De

Print
Add to your cart (remove)
More searches

Search for this title in:
Other Libraries (WorldCat) Other Databases (Google Scholar) Online Stores (Bookfinder.com) Open Library (openlibrary.org)