| 000 | 00660 a2200313 4500 | ||
|---|---|---|---|
| 001 | 125972 | ||
| 020 | _a1 | ||
| 041 | _aeng | ||
| 080 | _a537.311.3 May(2) | ||
| 245 | _aIon implantation in semiconductors : silicon and germanium | ||
| 250 | _a | ||
| 260 | _aNew York | ||
| 260 | _bAcademic Press, | ||
| 260 | _c1970 | ||
| 300 | _axiii,280 p. | ||
| 300 | _c23.5 cm | ||
| 490 | _a | ||
| 100 | _aMayer, James W. | ||
| 700 | _aEriksson, Lennart | ||
| 700 | _aDavies, John A. | ||
| 700 | _a | ||
| 650 | _a | ||
| 650 | _aSemiconductors | ||
| 650 | _aIon implantation | ||
| 650 | _aSilicon | ||
| 650 | _aGermanium | ||
| 942 | _cBK | ||
| 942 | _2UDC | ||
| 999 |
_c92305 _d92305 |
||