| 000 | 00579 a2200265 4500 | ||
|---|---|---|---|
| 001 | 90502 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a621.382.3Kha | ||
| 245 | _aInsulated gate bipolar transistor, IGBT : theory and design | ||
| 250 | _a | ||
| 260 | _aNew Jersey | ||
| 260 | _bIEEE Press/Wiley-Interscience | ||
| 260 | _c2003 | ||
| 300 | _axix,627 p. | ||
| 300 | _c24 cm | ||
| 490 | _a | ||
| 100 | _aKhanna, Vinod Kumar | ||
| 700 | _a | ||
| 650 | _a | ||
| 650 | _aElectrical Engineering | ||
| 650 | _aInsulated gate bipolar transistor | ||
| 942 | _cBK | ||
| 942 | _2UDC | ||
| 999 |
_c33206 _d33206 |
||