000 01030nam a22002897a 4500
003 OSt
005 20230610111456.0
008 200909b ||||| |||| 00| 0 eng d
040 _cIITB
041 _aeng
080 _a621.382.3
_bPen
100 _aPenugonda, Harsha Vardhan
_917135
_eAuthor
245 _aMetal work-function induced threshold voltage variability in multi-gate transistors (R)
260 _aMumbai
_bIIT
_c2019
300 _axx,92 p.
_c30 cm
502 _aThesis
_bPh.D
_cIndian Institute of Technology Bombay. Department of Electrical Engineering
_d2019
650 0 _aTheses and Dissertations
_921
650 0 _aElectronics
_91686
650 0 _9645
_aSemiconductors
650 0 _aTransistors
_919395
650 0 _aVoltage variability
_919396
650 _aMetal gate granularity
_919397
700 _aGanguly, Udayan
_eSupervisor
_917136
700 _aGanguly, Swaroop
_eSupervisor
_919398
710 _aIndian Institute of Technology Bombay.
_bDepartment of Electrical Engineering
_964
942 _2udc
_cTD
999 _c277191
_d277191