000 | 01030nam a22002897a 4500 | ||
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003 | OSt | ||
005 | 20230610111456.0 | ||
008 | 200909b ||||| |||| 00| 0 eng d | ||
040 | _cIITB | ||
041 | _aeng | ||
080 |
_a621.382.3 _bPen |
||
100 |
_aPenugonda, Harsha Vardhan _917135 _eAuthor |
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245 | _aMetal work-function induced threshold voltage variability in multi-gate transistors (R) | ||
260 |
_aMumbai _bIIT _c2019 |
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300 |
_axx,92 p. _c30 cm |
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502 |
_aThesis _bPh.D _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2019 |
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650 | 0 |
_aTheses and Dissertations _921 |
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650 | 0 |
_aElectronics _91686 |
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650 | 0 |
_9645 _aSemiconductors |
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650 | 0 |
_aTransistors _919395 |
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650 | 0 |
_aVoltage variability _919396 |
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650 |
_aMetal gate granularity _919397 |
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700 |
_aGanguly, Udayan _eSupervisor _917136 |
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700 |
_aGanguly, Swaroop _eSupervisor _919398 |
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710 |
_aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering _964 |
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942 |
_2udc _cTD |
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999 |
_c277191 _d277191 |