| 000 | 01002nam a22002777a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20230527152405.0 | ||
| 008 | 180711b xxu||||| |||| 00| 0 eng d | ||
| 040 | _cIITB | ||
| 041 | _aeng | ||
| 080 |
_a043:621.382 _bGho |
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| 100 |
_aGhosh, Kankat _91434 _eAuthor |
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| 245 | _aIII-nitrides for electronic applications : from growth to device (R) | ||
| 260 |
_aMumbai _bIIT _c2017 |
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| 300 |
_avarious p. _c30 cm |
||
| 502 |
_aThesis _bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2017 |
||
| 650 | 0 |
_aTheses and Dissertations _921 |
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| 650 | 0 |
_aSemiconductors _xMaterials _91109 |
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| 650 | 0 |
_aSemiconductor devices _xFabrication _91435 |
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| 650 | 0 |
_aGallium Nitride (GaN) _xElectric properties _9646 |
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| 650 | 0 |
_aOptoelectronics _9643 |
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| 650 | 0 |
_aMolecular beam epitaxy _9942 |
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| 700 |
_aLaha, Apurba _eSupervisor _91436 |
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| 710 |
_aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering _964 |
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| 942 |
_2udc _cTD |
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| 999 |
_c271593 _d271593 |
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