| 000 | 01167nam a22003137a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20230603121032.0 | ||
| 008 | 180524b xxu||||| |||| 00| 0 eng d | ||
| 040 | _cIITB | ||
| 041 | _aeng | ||
| 080 |
_a043:621.382.3 _bKau |
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| 100 |
_aKaushik, Naveen _9873 _eAuthor |
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| 245 | _aTransition metal dichalcogenides for logic and memory applications (R) | ||
| 260 |
_aMumbai _bIIT _c2018 |
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| 300 |
_axxxvi,157 p. _c30 cm |
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| 502 |
_aThesis _bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2018 |
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| 650 | 0 |
_aTheses and Dissertations _921 |
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| 650 | 0 |
_9449 _aMetal oxide semiconductors field-effect transistors |
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| 650 | 0 |
_aMetal oxide semiconductors, Complementary _9393 |
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| 650 | 0 |
_aTransistor circuits _9448 |
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| 650 | 0 |
_aChalcogenides _9876 |
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| 650 | 0 |
_aTransition metal compounds _9950 |
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| 650 | 0 |
_aSilicon _xElectric properties _9951 |
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| 650 | 0 |
_aGermanium _xElectric properties _9952 |
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| 650 | 0 |
_aCompound semiconductors _9957 |
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| 700 |
_aLodha, Saurabh _eSupervisor _9874 |
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| 710 |
_aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering _964 |
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| 942 |
_2udc _cTD |
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| 999 |
_c271367 _d271367 |
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