| 000 | 00585 a2200253 4500 | ||
|---|---|---|---|
| 001 | 40139 | ||
| 020 | _a3 | ||
| 041 | _aeng | ||
| 080 | _a621.382 Aki | ||
| 245 | _aModeling the process dependence of electrical charges associated with the silicon/silicon-dioxide interface | ||
| 250 | _a | ||
| 260 | _aStanford | ||
| 260 | _bStanford University, | ||
| 260 | _c1987 | ||
| 300 | _axxii,157 p. | ||
| 300 | _c20.5 cm | ||
| 490 | _a | ||
| 100 | _aAkinwande, Akintunde Ibitayo | ||
| 700 | _a | ||
| 650 | _a | ||
| 650 | _aSilicon-Electric properties | ||
| 942 | _cBK | ||
| 942 | _2UDC | ||
| 999 |
_c26436 _d26436 |
||