| 000 | 00652 a2200241 4500 | ||
|---|---|---|---|
| 001 | 306030 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _aLNBS SMT SP - 400 - 22 : 1976 | ||
| 245 | _aMicroelectronics test pattern NBS-3 for evaluting the resistivity- dopant density relationship of silicon | ||
| 250 | _a | ||
| 260 | _aWashington, D.C. | ||
| 260 | _bNational Bureau of standards | ||
| 260 | _c1976 | ||
| 300 | _a49 p. | ||
| 300 | _c | ||
| 856 | _uNBS | ||
| 490 | _aNBS SMT SP - 400 - 22 : 1976 | ||
| 700 | _a | ||
| 650 | _a | ||
| 650 | _aDopant density, Microelectronics, MOS capacitor, n-p-n transistor fabrication, p-n juncation | ||
| 942 | _cPP | ||
| 942 | _2UDC | ||
| 999 |
_c254547 _d254547 |
||