000 00615 a2200241 4500
001 280127
020 _a
041 _aeng
080 _aLNASA TP 2170 : 1983
245 _aTheoretical study of electron mobility in modulation - doped alluminum, gallium, arsenide, gallium arsenide
250 _a
260 _aWashington, D.C.
260 _bNational Aeronautics & Space Administration
260 _c1983
300 _a9 p.
300 _c
856 _u
490 _aNASA TP 2170 : 1983
700 _a
650 _a
650 _aGaAs, Mobility, Heterostructure, Modulation doping,Screening
942 _cPP
942 _2UDC
999 _c239585
_d239585