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008			230603b |||||||| |||| 00| 0 eng d
040			_cIITB
041			_aeng
080			_a043:621.382 _bTak
100			_aTakhar, Kuldeep _eAuthor _949827
245			_aDevice engineering for high performance AlGaN/GaN HEMTs (R)
260			_aMumbai _bIIT _c2017
300			_axviii,103 p. _c30 cm
502			_aThesis _bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2017
650		0	_aTheses and Dissertations _921
650		0	_aSemiconductors _91109 _xMaterials
650		0	_aMetal oxide semiconductor field-effect transistors _98903 _xeffect transistors
650		0	_aGallium Nitride (GaN) _9646 _xElectric properties
700			_aSaha, Dipankar _9647 _eSupervisor
700			_aGanguly, Swaroop _9648 _eSupervisor
710			_964 _aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering
942			_cTD _2udc
999			_c238547 _d238547