| 000 | 00571 a2200241 4500 | ||
|---|---|---|---|
| 001 | 279365 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _aLNASA TP 2170 : 1983 | ||
| 245 | _aTheoretical study of electron mobility in modulation-doped aluminum gallium arsenide-gallium arsenide | ||
| 250 | _a | ||
| 260 | _aWashington, D.C. | ||
| 260 | _bNASA | ||
| 260 | _c1983 | ||
| 300 | _a9 p. | ||
| 300 | _c | ||
| 856 | _u | ||
| 490 | _aNASA TP 2170 : 1983 | ||
| 700 | _a | ||
| 650 | _a | ||
| 650 | _aGaAs, Mobility, Heterostructure, Modulation doping, Screening | ||
| 942 | _cPP | ||
| 942 | _2UDC | ||
| 999 |
_c238287 _d238287 |
||