000 | 00930 a2200265 4500 | ||
---|---|---|---|
001 | 386896 | ||
003 | OSt | ||
005 | 20230603104817.0 | ||
008 | 230603b |||||||| |||| 00| 0 eng d | ||
040 | _cIITB | ||
041 | _aeng | ||
080 |
_a043:621.382:681.3.07 _bPan |
||
100 |
_aPanwar, Neeraj _eAuthor _949804 |
||
245 | _aDevelopment of Pr0.7Ca0.3MnO3 based RRAM and synapse (R) | ||
260 |
_aMumbai _bIIT _c2017 |
||
300 |
_axiii,146 p. _c30 cm |
||
502 |
_aThesis
_bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2017 |
||
650 | 0 |
_aTheses and Dissertations _921 |
|
650 | 0 |
_aSemiconductor storage devices _9240 |
|
650 | 0 |
_aRandom Access Memory (RAM) _913856 |
|
650 | 0 |
_aFlash memories(Computers) _910317 |
|
700 |
_aGanguly, Udayan _910295 _eSupervisor |
||
710 |
_964 _aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering |
||
942 |
_cTD _2udc |
||
999 |
_c238274 _d238274 |