| 000 | 01074 a2200313 4500 | ||
|---|---|---|---|
| 001 | 380296 | ||
| 003 | OSt | ||
| 005 | 20230513152404.0 | ||
| 008 | 230513b |||||||| |||| 00| 0 eng d | ||
| 040 | _cIITB | ||
| 041 | _aeng | ||
| 080 |
_a043:621.382.3 _bBha |
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| 100 |
_aBhatt, Piyush Navinchandra _eAuthor _948496 |
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| 245 | _aGate stack and junction engineering for high performance ge MOSFETs (R) | ||
| 260 | _aBombay | ||
| 260 | _bIIT | ||
| 260 | _c2016 | ||
| 300 | _axx,161 p. | ||
| 300 | _c30 cm | ||
| 502 |
_aThesis
_bPh.D _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2016 |
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| 650 |
_aLodha, Saurabh and Ganguly, Udayan _948497 |
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| 650 |
_aTheses and Dissertations _921 |
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| 650 |
_aMetal oxide semiconductor field-effect transistors _98903 |
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| 650 |
_aGermanium-Electric properties _948498 |
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| 700 |
_aLodha, Saurabh _eSupervisor _948499 |
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| 700 |
_aGanguly, Udayan _eSupervisor _948500 |
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| 710 |
_aIndian Institute of Technology Bombay _b Department of Electrical Engineering _964 |
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| 942 |
_cTD _2udc |
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| 999 |
_c237160 _d237160 |
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