000 | 00750 a2200289 4500 | ||
---|---|---|---|
001 | 39285 | ||
020 | _a0-931837-01-40 | ||
041 | _aeng | ||
080 | _a537.311.33:548.526 Imp:84 | ||
245 | _aImpurity diffusion and gettering in silicon : symposium, Boston, Nov. 27-30, 1984 / edited by R.B. Fair, Charles W. Pearce and Jack Washburn | ||
250 | _a | ||
260 | _aPittsburgh | ||
260 | _bMaterials Research Society, | ||
260 | _c1985 | ||
300 | _axiii,284 p. | ||
300 | _c23 cm | ||
490 | _a | ||
100 | _a | ||
700 | _a | ||
650 | _a | ||
650 | _aSemiconductors-Defects-Congresses | ||
650 | _aDiffusion-Congresses | ||
650 | _aSemiconductor doping-Congresses | ||
650 | _aGetters-Congresses | ||
942 | _cBK | ||
942 | _2UDC | ||
999 |
_c23698 _d23698 |