000 | 01086 a2200277 4500 | ||
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001 | 377816 | ||
003 | OSt | ||
005 | 20240618133136.0 | ||
008 | 230513b |||||||| |||| 00| 0 eng d | ||
040 | _cIITB | ||
041 | _aeng | ||
080 |
_a043:621.382 _bGoe |
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100 |
_aGoel, Nilesh _eAuthor _943267 |
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245 | _aCharacterization and modelling of NBTI in silicon oxynitride (SiON) and high-k metal gate p-MOSFETs with impact on circuit performance (R) | ||
260 |
_aMumbai _bIIT _c2015 |
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300 |
_axxv,208 p. _c30 cm |
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502 |
_aThesis
_bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2015 |
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650 | 0 |
_aTheses and Dissertations _921 |
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650 | 0 |
_aSilicon nitride _9387 |
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650 | 0 |
_aMetal oxide semiconductor field-effect transistors _98903 |
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650 | 0 |
_aMetal oxide semiconductors-Effect of temperature on _947304 |
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650 | 0 |
_aGate array circuits _xMaterials _99287 |
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700 |
_aMahapatra, Souvik _9450 _eSupervisor |
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710 |
_964 _aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering |
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942 |
_cTD _2udc |
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999 |
_c236803 _d236802 |