000 01086 a2200277 4500
001 377816
003 OSt
005 20240618133136.0
008 230513b |||||||| |||| 00| 0 eng d
040 _cIITB
041 _aeng
080 _a043:621.382
_bGoe
100 _aGoel, Nilesh
_eAuthor
_943267
245 _aCharacterization and modelling of NBTI in silicon oxynitride (SiON) and high-k metal gate p-MOSFETs with impact on circuit performance (R)
260 _aMumbai
_bIIT
_c2015
300 _axxv,208 p.
_c30 cm
502 _aThesis
_bPh.D.
_cIndian Institute of Technology Bombay. Department of Electrical Engineering
_d2015
650 0 _aTheses and Dissertations
_921
650 0 _aSilicon nitride
_9387
650 0 _aMetal oxide semiconductor field-effect transistors
_98903
650 0 _aMetal oxide semiconductors-Effect of temperature on
_947304
650 0 _aGate array circuits
_xMaterials
_99287
700 _aMahapatra, Souvik
_9450
_eSupervisor
710 _964
_aIndian Institute of Technology Bombay.
_bDepartment of Electrical Engineering
942 _cTD
_2udc
999 _c236803
_d236802