| 000 | 00607 a2200265 4500 | ||
|---|---|---|---|
| 001 | 346802 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382Rat | ||
| 245 | _aOptimization of phosphorus and boron dopant profiles using plasma immersion ion implantation (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2013 | ||
| 300 | _a38 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aRathi, Anand | ||
| 700 | _aPinto, Richard | ||
| 650 | _aPinto, Richard | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aSemiconductors , Ion implantation | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c230982 _d230982 |
||