| 000 | 00686 a2200265 4500 | ||
|---|---|---|---|
| 001 | 346326 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:669.871:621.382.2Saw | ||
| 245 | _aMetal GaAs contacts : study of interfacial reaction products due to sulfide passivation and their effect on device properties (R) | ||
| 250 | _a | ||
| 260 | _aBombay | ||
| 260 | _bIIT | ||
| 260 | _c1994 | ||
| 300 | _aiii,182 p. | ||
| 300 | _c28 cm | ||
| 490 | _a | ||
| 100 | _aSawant, Nilima M. | ||
| 700 | _aSrinivasa, R.S. | ||
| 650 | _aSrinivasa, R.S. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aGallium arsenide semiconductors , Diodes , Semiconductors | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c230433 _d230433 |
||