000 | 00647 a2200265 4500 | ||
---|---|---|---|
001 | 346149 | ||
020 | _a | ||
041 | _aeng | ||
080 | _a043:621.382.3Cha | ||
245 | _aInterlayer gate dielectrics for Germanium MOSFETs (R) | ||
250 | _a | ||
260 | _aMumbai | ||
260 | _bIIT | ||
260 | _c2013 | ||
300 | _a77 p. | ||
300 | _c30 cm | ||
490 | _a | ||
100 | _aChaudhuri, Krishnakali | ||
700 | _aLodha, Saurabh Vijaykumar | ||
650 | _aLodha, Saurabh Vijaykumar | ||
650 | _aTheses and Dissertations | ||
650 | _aMetal oxide semiconductor field-effect transistors , Germanium-Electric properties | ||
942 | _cTD | ||
942 | _2UDC | ||
999 |
_c230213 _d230213 |