| 000 | 00705 a2200265 4500 | ||
|---|---|---|---|
| 001 | 345854 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382Swa | ||
| 245 | _aHigh performance Ge junctions enabled by Cold/Hot ion implantation for beyond 22nm CMOS (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2013 | ||
| 300 | _aix,29 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aSwarnkar, Prashant | ||
| 700 | _aLodha, Saurabh | ||
| 650 | _aLodha, Saurabh | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetal oxide semiconductors , Complimentary , Metal oxide semiconductor field-effect transistors , Germanium-Electric properties | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c230002 _d230002 |
||