| 000 | 00688 a2200265 4500 | ||
|---|---|---|---|
| 001 | 344516 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382.3:537.53Ekb | ||
| 245 | _aNumerical simulation of radiation effects in silicon-on-insulator MOSFETs (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c1997 | ||
| 300 | _a56 p. | ||
| 300 | _c28 cm | ||
| 490 | _a | ||
| 100 | _aEkbote, Shashank S. | ||
| 700 | _aVasi, J. | ||
| 650 | _aVasi, J. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetal oxide semiconductor field-effect transistors-Simulation , Semiconductors-Effect of radiation on , Ionizing radiation-Dosage | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c228158 _d228158 |
||