| 000 | 00701 a2200265 4500 | ||
|---|---|---|---|
| 001 | 339064 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:669.782:621.382Bha | ||
| 245 | _aCurvature measurement and stresses in electronic devices due to strained silicon nitride layer (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2013 | ||
| 300 | _avii,76 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aBharani, Rahil | ||
| 700 | _aPant, Prita and Dusane, R.O. | ||
| 650 | _aPant, Prita and Dusane, R.O. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aSilicon nitride coatings , Strains and stresses-Measurement , Curvature-Measurement | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c219941 _d219941 |
||