| 000 | 00651 a2200265 4500 | ||
|---|---|---|---|
| 001 | 304876 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382.3Cha | ||
| 245 | _aTCAD simulation for high K germanium devices (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2011 | ||
| 300 | _aii,42 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aChakraborty, Debarsi | ||
| 700 | _aGanguly, Swaroop | ||
| 650 | _aGanguly, Swaroop | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetal oxide semiconductor field-effect transistors , Dielectrics , Gate array circuits , Electronics devices | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c216500 _d216500 |
||