000 | 00649 a2200265 4500 | ||
---|---|---|---|
001 | 38278 | ||
020 | _a0-444-87944-730 | ||
041 | _aeng | ||
080 | _a621.382 Ins-1 | ||
245 | _aInstabilities in silicon devices : silicon passivation and related instabilities / edited by Gerard Barbottin and Andre Vapaille | ||
250 | _a | ||
260 | _aAmsterdam | ||
260 | _bNorth-Holland, | ||
260 | _c1986 | ||
300 | _av.1 | ||
300 | _c26 cm | ||
490 | _a | ||
100 | _a | ||
700 | _a | ||
650 | _a | ||
650 | _aIntegrated circuits-Passivation-Congresses | ||
650 | _aSilicon-Electric properties-Congresses | ||
942 | _cBK | ||
942 | _2UDC | ||
999 |
_c21030 _d21030 |