000 | 00917 a2200253 4500 | ||
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001 | 291916 | ||
003 | OSt | ||
005 | 20230506144610.0 | ||
008 | 230506b |||||||| |||| 00| 0 eng d | ||
040 | _cIITB | ||
041 | _aeng | ||
080 |
_a043:621.382.3:621.316.72 _bKon |
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100 |
_aKondekar, Pravin N. _eAuthor _947936 |
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245 | _aSimulation studies of superjunction power MOSFET (R) | ||
260 |
_aMumbai _c2002 _bIIT |
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300 |
_axi,103 p. _c30 cm |
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502 |
_aThesis
_bPh.D. _cIndian Institute of Technology Bombay. Department of Electrical Engineering _d2002 |
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650 | 0 |
_aTheses and Dissertations _921 |
|
650 |
_aMetal oxide semiconductor field _vSimulation methods _xeffect transistors _947937 |
||
650 | 0 |
_aPower factors _919637 |
|
700 |
_aPatil, Mahesh B. _eSupervisor _947301 |
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710 |
_964 _aIndian Institute of Technology Bombay. _bDepartment of Electrical Engineering |
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942 |
_cTD _2udc |
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999 |
_c208060 _d208060 |