| 000 | 00629 a2200265 4500 | ||
|---|---|---|---|
| 001 | 276542 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:621.382:621.793Tir | ||
| 245 | _aCharacterization of Si3N4, i-poly Si, n-poly Si and SiON, films grown by LPCVD systems (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2009 | ||
| 300 | _aix,49 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aTirpude, Navneet | ||
| 700 | _aPinto, R. | ||
| 650 | _aPinto, R. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aChemical vapor deposition , Silicon nitride , Thin films | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c205784 _d205784 |
||