| 000 | 00676 a2200265 4500 | ||
|---|---|---|---|
| 001 | 276294 | ||
| 020 | _a | ||
| 041 | _aeng | ||
| 080 | _a043:681.382.3Min | ||
| 245 | _aInvestigation on ICPCVD silicon nitride for sub 100 nm MOSFET and MEMS application (R) | ||
| 250 | _a | ||
| 260 | _aMumbai | ||
| 260 | _bIIT | ||
| 260 | _c2009 | ||
| 300 | _aix,66 p. | ||
| 300 | _c30 cm | ||
| 490 | _a | ||
| 100 | _aMinj, Albert | ||
| 700 | _aPinto, R. | ||
| 650 | _aPinto, R. | ||
| 650 | _aTheses and Dissertations | ||
| 650 | _aMetal oxide semiconductor field-effect transistors , Chemical vapor deposition , Silicon nitride , X-rays dittraction | ||
| 942 | _cTD | ||
| 942 | _2UDC | ||
| 999 |
_c205728 _d205728 |
||